The roots of the Russia-China collaboration date back to 2014, following Russia’s annexation of Crimea. …
Read More »GaN on Diamond for next gen Power Devices and High-Power RF applications
Gallium nitride (GaN) is hot. Even hotter is a race to integrate GaN with other materials to boost GaN’s performance further. The power electronics industry has seen the theoretical performance limit reached by silicon MOSFETs and now needs to move to a new element. GaN is a wide bandgap, …
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