DARPA NGMM for manufacturing Next Generation 3DHI (three-dimensional heterogeneous integration) microsystems

Rajesh Uppal 3 days ago Electronics & EW, Manufacturing, Material Comments Off on DARPA NGMM for manufacturing Next Generation 3DHI (three-dimensional heterogeneous integration) microsystems 1,157 Views

DARPA NGMM and 3DHI: Transforming Microelectronics for Defense and AI

DARPA’s Next-Generation Microelectronics Manufacturing program is driving 3D Heterogeneous Integration, redefining chip technology for secure, high-performance defense and computing applications.

Introduction: A National Effort to Reclaim Microelectronics Dominance

The Defense Advanced Research Projects Agency (DARPA) has initiated a transformative effort to solidify U.S. leadership in microelectronics manufacturing through its Next-Generation Microelectronics Manufacturing (NGMM) program. Central to this initiative is the establishment of a first-of-its-kind national consortium focused on advancing 3D heterogeneous integration (3DHI) technologies.

As Moore’s Law reaches its physical limits, the ability to tightly integrate diverse chip functions in three dimensions offers a new path forward in performance, functionality, and efficiency. NGMM not only aims to push the boundaries of hardware capabilities but also to revitalize domestic microelectronics manufacturing, which is critical for national security and economic leadership. The NGMM program is not just an incremental step forward; it promises to revolutionize how next-generation microelectronics are conceived, developed, and deployed.

Let’s delve into the intricacies of this transformative program and its potential impact on the future of microsystem manufacturing.

The Strategic Importance of Microelectronics

Microelectronics form the technological core of modern economic and national security systems. From artificial intelligence and autonomous platforms to next-gen communication networks and sensing technologies, microelectronics are critical enablers of dual-use innovations.

Modern warfare is increasingly dependent on microelectronics capabilities that sense the environment, convert the signals into data streams, process the information, and generate a response. In this sense, Aerospace and Defense (A-D) systems are quite similar to commercial systems that perform communications and computations, while taking advantage of the advancement of semiconductor density, functionality, and cost reduction due to Moore’s Law. There is the everincreased demand for more data throughput through wired and wireless systems. Cellular systems have migrated from 3G to 4G and now 5G architectures which improves bandwidth ~10X with each generation. DoD systems for communications, radar, and sensing generally require wider bandwidths, higher dynamic range, and higher transmit power, as well as specialized frequency bands and security requirements that the commercial side does not require.

While continued scaling of silicon transistors is expected to deliver improvements over the next decade, traditional methods alone are approaching the limits of cost efficiency and performance enhancement. The industry can no longer rely solely on CMOS transistor scaling to drive long-term innovation. A shift in perspective is needed—one that embraces the future of microelectronics through integration of diverse materials and architectures, rather than scaling alone.

The next major wave of microelectronics innovation is expected to come from the ability to integrate heterogeneous materials, devices, and circuits through advanced packaging, producing a tightly coupled system that extends into the third dimension with performance that exceeds what is available from today’s monolithic approach.

Access to leading-edge silicon remains vital, but it must now be viewed as a single component in a broader strategy aimed at ensuring innovation, resilience, and supply chain security. The COVID-19 pandemic and shifting global dynamics have exposed vulnerabilities in the microelectronics supply chain. These disruptions have prompted the U.S. to reevaluate its domestic capabilities for chip production and innovation. The CHIPS and Science Act has re-energized the U.S. semiconductor sector by offering funding and incentives. However, while the Act addresses short-term manufacturing and supply chain goals, it stops short of laying out a bold vision for long-term R&D innovation.

Understanding the Promise of 3DHI Microsystems

To appreciate the full scope of DARPA’s NGMM program, it is essential to understand what 3DHI microsystems represent. Unlike traditional 2D integration, which lays components side by side, 3DHI stacks and interconnects different materials and devices vertically within the same package. 3D Heterogeneous Integration involves stacking and interconnecting multiple chiplets—such as processors, memory units, RF components, and photonics—within a single package. These chiplets may come from different foundries or be built using different technologies, yet they function together as a unified microsystem.

This vertical integration allows for significant reductions in latency, power consumption, and form factor, while enabling much higher bandwidth communication between components compared to traditional planar circuit layouts.

As noted in the IEEE Heterogeneous Integration Roadmap, heterogeneous integration refers to the incorporation of separately manufactured components into a unified system-in-package (SiP) that delivers greater performance and versatility. The “3D” component of 3DHI signifies this vertical stacking of diverse chiplets—logic, memory, photonics, RF, and power—within a single advanced package. These breakthroughs offer significantly higher transistor density and performance compared to conventional monolithic integration.

Current Industry Gaps and Limitations

Despite the promise of 3DHI, significant structural and technical barriers within the current U.S. research and development ecosystem hinder progress. One of the most critical challenges is the absence of centralized facilities that facilitate collaboration, knowledge exchange, and shared prototyping capabilities. The U.S. currently lacks an open-access, centralized manufacturing hub that supports the full cycle of 3DHI research and development—from design and prototyping to assembly and testing. Existing facilities typically involve prohibitively long iteration cycles, require expensive fabrication equipment, and depend on proprietary design tools that limit the exploration of unconventional or novel architectures.

The lack of standardized processes and interoperable tools across institutions and companies further compounds the problem, resulting in fragmented and often redundant development efforts. Moreover, access to affordable, low-volume manufacturing remains elusive for many startups and academic institutions. Most innovators rely on foreign facilities, such as TSMC in Taiwan or IMEC in Belgium, to fabricate and test 3DHI components. This dependence not only stifles domestic innovation but also raises strategic concerns for defense and critical infrastructure systems.

Global semiconductor leaders such as Intel, AMD, TSMC, Samsung, and SK hynix are actively developing 3D packaging and integration technologies. However, much of this progress is siloed within proprietary ecosystems and targeted at high-volume commercial markets. As a result, U.S. startups, research institutions, and defense contractors often lack access to affordable, domestic 3DHI R&D and prototyping facilities.

Establishing a domestic, open-access manufacturing hub for 3DHI would significantly accelerate R&D cycles, reduce costs, and foster a collaborative environment that encourages shared learning. Such a facility would be instrumental in enabling startups, universities, and the defense industrial base to engage meaningfully in low-volume, early-stage 3DHI development, ultimately fueling a broader wave of technological innovation.

DARPA’s Vision for the NGMM Program

Traditional silicon scaling approaches have delivered performance improvements for decades, but as transistor sizes approach atomic scales, gains are slowing. NGMM recognizes that further progress lies not just in shrinking devices, but in how we integrate them. By moving to 3D, we can dramatically increase system-level performance while incorporating diverse functionality into a compact form factor.

The NGMM program envisions the establishment of a national pilot-line manufacturing capability focused on 3DHI microsystems. The objective is to create an integrated ecosystem where researchers, startups, and industry can prototype, iterate, and validate heterogeneous microsystems without the need to invest in costly fabrication infrastructure.

Unlike other federally authorized programs that focus primarily on silicon-based technologies, NGMM is uniquely positioned to advance the integration of dissimilar material systems. These include compound semiconductors for high-frequency radio applications, photonic devices for ultra-fast data transfer, novel memory architectures for computing, and wide-bandgap materials like Gallium Nitride (GaN) for power electronics.

Holistic Approach to 3DHI Advancement

DARPA envisions that the next major wave of innovation in microelectronics will be driven by the ability to integrate heterogeneous materials, devices, and circuits using advanced packaging technologies. In response, DARPA proposes the establishment of a national accelerator for next-generation 3DHI, a strategic initiative designed to serve as a catalyst for future breakthroughs. This accelerator would function as a pilot-line manufacturing facility, accessible to research and development teams across the country.

What sets NGMM apart is its holistic approach to the 3DHI challenge. The program does not merely seek to improve one part of the microsystem pipeline. Instead, it aims to integrate key capabilities—such as design tools, simulation models, packaging techniques, assembly platforms, and testing methodologies—into a cohesive national resource. This comprehensive infrastructure will drastically reduce prototyping cycle times and lower costs, allowing for faster innovation across commercial, academic, and defense sectors.

A national 3DHI accelerator facility under the NGMM program will feature short turnaround times, centralized manufacturing, and shared resources. This approach will enable rapid testing and validation of new device architectures, encouraging broader participation from organizations that have traditionally been excluded due to the high cost of entry.

Furthermore, the proposed national accelerator would take a comprehensive approach to strengthening U.S. leadership in 3DHI technologies. It would serve as a centralized hub offering shared manufacturing resources, thereby reducing duplication and inefficiencies across the ecosystem. One of its core priorities would be to minimize process cycle times, enabling rapid prototyping and iterative testing essential for agile R&D. By pooling capabilities for design, packaging, assembly, and testing under one roof, the accelerator would significantly lower costs and promote broader access, particularly for startups, academic researchers, and small defense contractors. This holistic model not only addresses current capability gaps but also ensures that the United States can maintain a competitive edge in the next generation of microelectronics integration.

Objectives of DARPA NGMM

DARPA’s goal is to go beyond incremental improvements and instead forge revolutionary pathways that redefine how microelectronics are designed and produced. This vision encompasses everything from new materials and advanced interconnect technologies to innovative packaging strategies and design tools that transcend the limitations of existing silicon-based fabrication methods.

Currently, industry leaders employ 3D integration techniques primarily for a narrow class of commercial applications that involve modestly dissimilar silicon-based digital technologies. These include familiar examples such as stacked dynamic random-access memory (DRAM), CMOS image sensors, and components used in high-performance computing systems. While these applications demonstrate the practical utility of existing 3D integration methods, they also reveal the limitations of current technologies.

The transformative potential of 3D heterogeneous integration (3DHI) for defense systems and national security depends on the ability to expand beyond silicon and integrate a broader spectrum of microelectronic components. Today’s mature 3DHI techniques are largely constrained to low-power CMOS technologies—both leading-edge and legacy nodes—and silicon-based memory. To fully realize the next leap in digital integration, it will be essential to push beyond current interconnect densities and develop new architectures that support tightly coupled, multifunctional systems.

Manufacturing at Scale

NGMM’s primary goal is to develop a scalable and cost-effective manufacturing ecosystem for 3DHI microsystems within the United States. This involves moving beyond lab-scale prototypes to mass production methods that are consistent, precise, and economically viable.

Enabling the Chiplet Ecosystem

DARPA envisions a manufacturing framework where complex microsystems can be assembled from a wide array of modular chiplets, making the design process faster and more flexible while enabling tailored solutions for different missions and markets.

Modular Design Paradigm

A key element of NGMM is the shift toward a chiplet-based design methodology, where pre-validated functional blocks can be assembled like building blocks. This approach reduces development time, lowers costs, and enhances design flexibility.

Such modularity allows developers to combine best-in-class components—such as GPUs from one vendor and photonics from another—into unified systems optimized for specific tasks, from AI processing to secure communications.

Compatibility and Standardization

To make this ecosystem viable, NGMM is promoting standardized interfaces and packaging formats that ensure interoperability across vendors and platforms. These standards will allow for the creation of a diverse, competitive supply chain, ensuring long-term sustainability and innovation

Program Description

The Next-Generation Microelectronics Manufacturing (NGMM) program is designed to establish a comprehensive domestic capability for research and development in 3D heterogeneous integration (3DHI). The program’s core objective is to develop and refine key process modules that support every stage of 3DHI microsystems manufacturing, including design, packaging, assembly, and testing. If successful, NGMM will deliver an open-access manufacturing center that serves as a central hub for these activities. The program envisions providing a pilot-line manufacturing capability that supports multi-project runs and dedicated taxi runs, offering flexible research services tailored to the needs of various users. Additionally, the program will include training and orientation to ensure widespread, effective utilization of the facility by academic researchers, industry stakeholders, and government partners alike.

In August 2022, DARPA released a solicitation for the NGMM program focused specifically on enabling 3DHI through the stacking of separately manufactured components derived from different material systems. This novel approach aims to combine diverse device functionalities within a single microsystem package, resulting in unprecedented improvements in performance, compactness, and functional density. By integrating multiple technologies at the package level, NGMM seeks to transcend the limitations of traditional 2D architectures and unlock new paradigms in microsystem functionality.

DARPA’s strategic expansion of heterogeneous integration under NGMM also encompasses a wide array of emerging semiconductor technologies. This includes compound semiconductors for radio frequency (RF) applications, photonic devices for high-speed interconnects, and novel memory architectures tailored for advanced computing needs. The initiative also supports the integration of wide-bandgap and ultra-wide bandgap semiconductors, which are critical for next-generation power electronics and high-voltage systems.

A particularly transformative aspect of the NGMM program is the 3DHI integration of high-efficiency Gallium Nitride (GaN) power amplifiers with densely functional silicon CMOS logic. This fusion of high-power RF performance with the versatility of digital CMOS will enable a new generation of compact, digitally enhanced RF integrated circuits. These advanced RF ICs are expected to significantly enhance the capabilities of radar and multifunction systems, opening the door to miniaturized, high-performance solutions for defense and commercial applications alike.

Exemplar Microsystems and Process Modules

The NGMM initiative places a strong emphasis on defining exemplar 3DHI microsystems that push the boundaries of current integration capabilities by incorporating disparate material systems within a single, vertically stacked package. These representative microsystems should embody a significant leap forward in performance, leveraging innovations in architecture, integration strategies, novel materials, and interconnect technologies. Targeted components include photonics for high-speed interconnects, cutting-edge memory devices for enhanced computing capabilities, wide-bandgap and ultra-wide bandgap semiconductors for power electronics, and additively manufactured passive elements—all combined into compact, high-efficiency packages..

Program Structure

The NGMM program is structured in multiple phases, beginning with Phase 0—a foundational six-month effort dedicated to defining the framework for a national 3DHI manufacturing center through collaboration between the U.S. Government, academia, and industry. Rather than focusing on the development of a specific design, Phase 0 is aimed at laying the groundwork for a robust R&D and prototyping ecosystem. Participants are expected to perform a comprehensive analysis of exemplar 3DHI microsystems, using existing designs that stand to benefit from 3DHI architectures. This analysis will inform critical planning decisions for the future manufacturing center by identifying the necessary tools, equipment, software, and facility requirements.

Phase 0 specifically calls for exemplar designs that include at least three vertically integrated 2D chips and a minimum of two distinct semiconductor material systems, such as silicon (Si), silicon-germanium (SiGe), gallium arsenide (GaAs), gallium nitride (GaN), indium phosphide (InP), mercury cadmium telluride (HgCdTe), or silicon carbide (SiC). Simply combining different CMOS nodes, such as 7 nm and 22 nm, is not sufficient unless complemented by other material systems; however, deeply scaled CMOS remains a valuable component of the architecture. Proposers must also consider the practicalities of assembling chips from diverse foundries using state-of-the-art packaging techniques, and should proactively address the development of interface standards to facilitate seamless integration. For instance, integrating a GaN power amplifier with a Si CMOS logic die presents material and design mismatches that must be harmonized to achieve functional interoperability within the 3DHI framework.

Proposers are encouraged to form interdisciplinary teams that include microsystem designers, tooling and equipment manufacturers, and system integrators. Their deliverables will include a detailed analytical report describing the exemplar microsystem’s layout, performance advantages, and potential applications. Additionally, the report must include recommendations for the required electronic design automation (EDA) tools, assembly and packaging technologies, and metrology and test solutions. A key objective is to establish a strategic balance in the diversity of supported 3DHI processes—ensuring the facility serves a broad user base without becoming prohibitively complex or costly to operate.

Following Phase 0, Phases 1 and 2 will advance the program toward operational capability. These stages will focus on establishing the physical manufacturing center, developing and refining baseline process modules, qualifying pilot-line manufacturing operations, and implementing a user access model that supports both research and prototyping.

Phase I (2024–2026) will prioritize infrastructure development, including the deployment of cutting-edge tools for wafer bonding, through-silicon via (TSV) etching, and precision lithography. These technologies are essential for integrating diverse components—such as processors, sensors, and photonics—into compact, high-performance modules. A standardized baseline fabrication process will be established to ensure interoperability across defense and commercial applications.

Phase II (2026–2028) will expand into design automation and emulation. An open-source 3D Assembly Design Kit (3D-ADK) will democratize access to 3DHI design, enabling startups and established manufacturers to rapidly prototype novel architectures. Concurrently, robotic process automation (RPA) will streamline manufacturing workflows, while emulation platforms will simulate performance in extreme environments, such as radiation-heavy space conditions.

These subsequent phases will solidify the vision of a national 3DHI accelerator, driving innovation and expanding U.S. leadership in heterogeneous microsystems integration.

DARPA has allocated $840 million to the NGMM program, with $420 million dedicated to each of Phases I and II. This funding will support infrastructure development, R&D grants, and workforce training initiatives. The program is set to commence in July 2024, with a draft announcement open for public comment until November 20, 2023. Early priorities include establishing pilot production lines for defense-specific applications, such as AI-optimized radar systems and radiation-hardened space electronics.

The Strategic Importance of 3DHI Microelectronics

As Moore’s Law slows and traditional scaling delivers diminishing returns, the next era of microelectronics innovation will depend heavily on how effectively we integrate multiple material systems and device architectures. DARPA’s NGMM program marks a critical turning point in this journey.

3D heterogeneous integration represents a paradigm shift in microelectronics, offering unparalleled performance, power efficiency, and miniaturization. By vertically stacking components, 3DHI reduces signal delays by 90% and cuts power consumption by 40–60%, enabling breakthroughs in AI processing, hypersonic guidance systems, and quantum computing interfaces. These advancements are critical for maintaining U.S. superiority in an era where microelectronics underpin nearly all defense technologies.

Global rivals are racing to dominate this field. China’s National Integrated Circuit Industry Investment Fund has committed $50 billion to heterogeneous integration, while the EU’s 3DSoIC program aims to establish regional leadership. DARPA’s NGMM program counters these efforts by fostering a resilient, U.S.-centric ecosystem capable of rapid innovation and production.

By supporting advanced packaging techniques and enabling heterogeneous integration at scale, NGMM has the potential to unlock new frontiers in computing, communication, and sensing. Its success would also signal a new chapter in U.S. technological leadership, fostering domestic resilience and reducing dependency on foreign infrastructure.

Challenges and Future Prospects

DARPA’s Next-Generation Microelectronics Manufacturing (NGMM) program promises to revolutionize microsystem fabrication through 3D Heterogeneous Integration (3DHI), yet the path to widespread adoption is marked by significant challenges. Chief among these are issues of material compatibility, manufacturing scalability, and long-term reliability—each of which must be addressed to ensure consistent performance in increasingly complex microsystems. Integrating chips from different foundries and disparate material systems within a single package introduces complexities in thermal expansion coefficients, interconnect alignment, and interface durability. These technical hurdles demand not only engineering innovation but also close coordination between academia, industry, and government stakeholders to develop and refine scalable solutions that meet both performance and economic benchmarks.

The NGMM program strategically targets several manufacturing and design bottlenecks that currently hinder 3DHI scalability. One of the foremost challenges is precision chiplet assembly, where sub-micron alignment and bonding are critical for functionality. NGMM is advancing automated micro-assembly methods to enable high-throughput, low-defect integration.

Another pressing concern is thermal management—as more chiplets are stacked, heat dissipation becomes increasingly difficult. To address this, the program is developing next-generation thermal interface materials and optimized packaging architectures. Furthermore, power delivery and signal integrity across multiple stacked layers require sophisticated interconnect solutions and robust power distribution networks.

NGMM is also investing in metrology and testing methodologies tailored to 3D structures, recognizing the importance of quality assurance in complex, miniaturized assemblies. As the program matures, its success will hinge on its ability to not only solve these challenges but also to establish an ecosystem that supports innovation, collaboration, and sustainable manufacturing practices.

Recent Progress

NGMM Phase 0: Laying the Groundwork for a 3DHI Revolution

In July 2023, DARPA took a decisive step forward in advancing domestic 3D heterogeneous integration (3DHI) by selecting eleven research teams for Phase 0 of the Next-Generation Microelectronics Manufacturing (NGMM) program. These multidisciplinary teams are exploring core challenges and opportunities in the field—ranging from the development of advanced 3D design tools and novel materials to the refinement of next-generation manufacturing processes. Their work forms the foundation of a comprehensive roadmap that will shape the strategic direction and technical priorities of subsequent program phases. This phase is not only building knowledge but also fostering collaboration across academia, government, and industry, laying the technical and institutional groundwork for a transformative shift in microelectronics manufacturing.

Phases 1 & 2: Constructing the NGMM Pilot Line—A Hub for Innovation and Prototyping

By November 2023, DARPA released a draft program announcement for Phases 1 and 2, signaling the transition from exploratory research to infrastructure development. These phases are focused on establishing the NGMM pilot-line facility—a first-of-its-kind, open-access prototyping center for 3DHI microsystems. Designed to serve a broad ecosystem of innovators, this facility will provide critical capabilities for design, fabrication, assembly, and testing under one roof. With proposals under review and award announcements expected in early 2024, momentum continues to build. DARPA has emphasized that the ultimate objective is to create a self-sustaining 3DHI manufacturing center operated by a non-federal entity. The success of this initiative will be measured by its ability to support diverse and high-performance 3DHI microsystems at competitive costs and rapid cycle times, enabling agile, next-generation microelectronics innovation across sectors.

DARPA has selected the Texas Institute for Electronics (TIE) at The University of Texas (UT) at Austin to develop 3D-integrated multi-chiplet advanced ‘semiconductor microsystems’ for the U.S. Department of Defense.

DARPA has selected the Texas Institute for Electronics (TIE) at the University of Texas at Austin to spearhead the development of advanced 3D-integrated multi-chiplet semiconductor microsystems as part of its Next Generation Microelectronics Manufacturing (NGMM) program. This ambitious $1.4 billion initiative—backed by $840 million from DARPA and $552 million from the Texas Legislature—aims to establish a national research and prototyping hub capable of producing lightweight, compact, and energy-efficient defense-grade microelectronic systems. The project will modernize two existing fabrication facilities at UT Austin, transforming them into cutting-edge centers for 3DHI (3D Heterogeneous Integration) technologies accessible to academia, industry, startups, and government entities.

Spanning two 2.5-year phases, the program will first focus on building infrastructure and foundational capabilities before moving to the development and prototyping of 3DHI hardware vital to national defense. This work addresses critical needs in military systems, where integrating multiple specialized chips—each optimized for different tasks like radar or guidance—into compact, high-performance packages can dramatically improve size, weight, and power efficiency. Unlike commercial off-the-shelf solutions, these defense-grade packaging technologies must meet stringent reliability and performance standards. While initially focused on defense, the resulting advancements are also expected to benefit civil applications, strengthening the U.S. microelectronics supply chain and supporting domestic innovation across both sectors.

DARPA NGMM Program at UTSA

As a core partner in DARPA’s Next-Generation Microelectronics Manufacturing (NGMM) initiative, the University of Texas at San Antonio (UTSA) plays a key role in advancing both technical capabilities and workforce readiness for the U.S. microelectronics sector. The program centers around developing 3D Heterogeneous Integration (3DHI) hardware—a critical step forward in combining diverse electronic components (such as analog, digital, photonic, and memory elements) into compact, high-performance microsystems. In the second 2.5-year phase of the NGMM initiative, the Texas Institute for Electronics (TIE) at UT Austin will engineer and prototype 3DHI systems to support defense and national security applications.

UTSA’s role involves training graduate students in semiconductor system design, with a strong emphasis on AI-driven digital hardware and neuromorphic computing, which mimics brain-like processing for edge applications. UTSA’s MATRIX AI Consortium provides the technical backbone, leveraging faculty expertise in embedded systems, device physics, NVM (non-volatile memory), cybersecurity, and analog AI accelerators. Students will gain hands-on experience in AI-enhanced chip design, cyber-robust microelectronics, and embedded system architecture for intelligent edge devices, all under the mentorship of MATRIX-affiliated researchers.

Additionally, UTSA will support manufacturing system optimization through targeted coursework and short courses on Lean Six Sigma, wafer-to-chip fabrication, and sustainable electronics production. Faculty members like Dr. Frank Chen and Dr. DD Dang will lead efforts in optimizing microelectronics production pipelines and enhancing reliability in AI-based systems. This comprehensive, cross-disciplinary technical training not only supports NGMM’s manufacturing goals but also positions UTSA students to contribute directly to the U.S.’s strategic goals in semiconductor sovereignty and defense-grade electronics innovation.

Defense and Dual-Use Applications

The NGMM program promises to transform a wide array of industries through the deployment of advanced 3DHI microsystems. In defense and aerospace, these innovations could yield compact, high-performance electronics that offer superior functionality in constrained environments, such as advanced radar systems, autonomous platforms, and space-based sensors. In the realm of advanced sensing technologies, 3DHI architectures can enable ultra-sensitive, miniaturized sensor arrays for environmental monitoring, national security, and medical diagnostics—bringing a new level of precision and responsiveness to critical applications.

Beyond the defense and industrial domains, the ripple effects of NGMM will be felt in healthcare and consumer electronics. Biomedical implants stand to benefit from enhanced integration of diverse material systems, allowing for smarter, more personalized solutions in diagnostics and therapeutic devices. Furthermore, the integration of novel semiconductors and photonic devices in 3DHI stacks could revolutionize next-generation communication systems—offering higher data throughput, reduced latency, and lower energy consumption. By driving innovation in smart, agile manufacturing aligned with Industry 4.0 principles, the NGMM initiative supports the creation of adaptive production environments capable of rapidly responding to evolving technological demands and market needs

Defense Applications

NGMM’s impact is particularly significant for defense systems. The military increasingly requires edge computing capabilities that integrate sensing, data fusion, secure processing, and communications—all in compact, ruggedized formats. 3DHI microsystems make this possible by packing high-performance, low-latency functions into a single deployable unit.

From drones and satellites to soldier-worn systems and autonomous vehicles, NGMM-enabled microsystems will provide new levels of performance in the field, especially where size, weight, and power constraints are critical.

Civilian and Commercial Benefits

While DARPA’s mandate is national defense, the technologies emerging from NGMM have wide-ranging civilian applications. High-performance microsystems developed under the program could benefit industries such as healthcare, automotive, telecommunications, and AI, spurring domestic innovation and strengthening the U.S. position in global semiconductor markets. Biomedical implants stand to benefit from enhanced integration of diverse material systems, allowing for smarter, more personalized solutions in diagnostics and therapeutic devices

Furthermore, the integration of novel semiconductors and photonic devices in 3DHI stacks could revolutionize next-generation communication systems—offering higher data throughput, reduced latency, and lower energy consumption. By driving innovation in smart, agile manufacturing aligned with Industry 4.0 principles, the NGMM initiative supports the creation of adaptive production environments capable of rapidly responding to evolving technological demands and market needs

Alignment with National Defense and Economic Policy

The NGMM program builds upon congressional initiatives such as the National Defense Authorization Act (NDAA) for FY2021, which authorized public-private partnerships to promote domestic manufacturing research in microelectronics. It complements other efforts like the National Semiconductor Technology Center and the National Advanced Packaging Manufacturing Program.

Moreover, DARPA’s NGMM effort is expected to be an integral part of the “Microelectronics Commons,” a Department of Defense-led national network of university-centered innovation hubs. While the Commons focuses broadly on transitioning innovations from laboratory to fabrication, NGMM addresses a more specific need: establishing a public, open-access pilot line dedicated exclusively to the advancement of 3DHI technologies

Toward a Secure and Sovereign Supply Chain

The NGMM program is also strategically focused on restoring domestic capability in microelectronics manufacturing. By developing a full-stack ecosystem for 3DHI—including materials, tools, processes, and standards—DARPA aims to reduce reliance on foreign supply chains and ensure access to critical technology during geopolitical uncertainties.

This initiative supports broader national efforts, such as the CHIPS Act, to reestablish the U.S. as a global leader in semiconductor innovation and manufacturing.

Conclusion

DARPA’s Next-Generation Manufacturing for Microsystems (NGMM) program represents a bold and necessary leap toward the future of microelectronics. By prioritizing open access, material diversity, and holistic integration, NGMM seeks to democratize 3DHI R&D and spark a nationwide wave of innovation. By focusing on the next generation of manufacturing for 3DHI Microsystems, DARPA is paving the way for a future where compact, multifunctional, and highly efficient microsystems will drive advancements across various industries. As this program unfolds, it promises to reshape the landscape of microsystem manufacturing, bringing us closer to a new era of technological possibilities.

With its emphasis on building a national pilot-line accelerator, NGMM is uniquely equipped to support both commercial breakthroughs and defense modernization. As the demand for powerful, compact, and multifunctional microsystems accelerates, the NGMM initiative stands as a timely and strategic response—one that promises to reshape the landscape of next-generation manufacturing.