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Gallium Nitride (GaN): Revolutionizing Aerospace and Military Communications, Radar, and Electronic Warfare (EW) Applications

The landscape of integrated circuits and power devices is undergoing a remarkable transformation with the emergence of Gallium Nitride (GaN) technology, a wide bandgap semiconductor material. Historically, the semiconductor industry relied heavily on silicon-based technology, but as demands for higher power density and energy efficiency surge across applications including advanced computers, consumer electronics, communication networks, and military systems, GaN is taking center stage. This groundbreaking material offers unprecedented advantages over silicon, particularly in challenging environments like those found in aerospace and military applications.

Advancing Beyond Silicon’s Limits

Silicon technology, once the bedrock of semiconductors, has encountered fundamental physical constraints. Integrated circuits and power devices utilized by the semiconductor industry for the production of advanced computers, consumer electronics, communication networks, and industrial and military systems have been almost exclusively based on silicon technology.

The requirements of future electronics place a great emphasis on achieving new devices with greater power density and energy efficiency, especially in the power electronics arena. This emphasis poses an increasing challenge to come up with new design protocols, innovative packaging, and even new semiconductor materials, as it is widely believed that silicon technology has finally reached its fundamental physical limits. In addition to the devices’ electrical requirements such as voltage and power ratings, the operational environments of power systems might encompass challenging conditions that include radiation, extreme temperature exposure, and wide-range thermal cycling, where conventional silicon-based systems are incapable of survival or efficient operation.

Power semiconductor devices are critical to the development of lightweight, highly efficient electronic systems needed for a wide variety of applications such as planetary exploration, deep space missions, terrestrial power grids, industrial machinery, and geothermal energy extraction.

Future electronics require new designs, innovative packaging, and fresh semiconductor materials. GaN, with its wide bandgap of 3.4 eV, presents an electrifying alternative.

Gallium nitride (GaN)

By amalgamating gallium (atomic number 31) and nitrogen (atomic number 7), the result is gallium nitride (GaN), a remarkable wide bandgap semiconductor material characterized by a rigid hexagonal crystal lattice. The term “bandgap” alludes to the energy required to liberate an electron from its orbital path around the nucleus. In the case of gallium nitride, this bandgap is an impressive 3.4 eV, a magnitude more than threefold that of silicon. This conspicuous difference designates it as a “wide” bandgap or WBG material.

The intrinsic significance of bandgap lies in its influence over a material’s electrical field tolerance. Gallium nitride’s broader bandgap confers a distinct advantage – it empowers the creation of semiconductors featuring remarkably compact or slim depletion regions. This, in turn, leads to the formulation of device architectures endowed with exceptionally elevated carrier densities. Through the construction of notably diminutive transistors and abbreviated current pathways, GaN achieves the feat of ultra-low resistance and capacitance and thus loses only a small proportion of power as heat. Consequently, speeds that surge ahead by a factor of up to 100 times are made attainable, pushing the boundaries of technological velocity. The material can handle 10 times the electrical current of silicon, enabling smaller, faster, and more efficient devices.

The benefits that GaN semiconductor devices offer over their silicon counterparts in power applications include greater efficiency at higher voltage, higher temperature operation, and higher frequency switching.

Empowering Tomorrow: GaN Technology and Applications

GaN technology

A pivotal progression in GaN technology pertains to the substrates utilized for GaN transistors. In the realm of electronics, a substrate, also known as a wafer, serves as the foundational material upon which transistors are constructed. Early on, GaN transistors relied on sapphire substrates, yet this choice yielded suboptimal results due to sapphire’s limited thermal conductivity, which hampered transistor performance. A solution emerged with the adoption of silicon carbide as a substrate material. Although the initial implementation incurred higher costs, the growing adoption of GaN technology across various applications subsequently led to cost reduction, rendering GaN transistors economically viable.

Unlocking GaN’s Potential in Military Applications

GaN’s outstanding attributes are particularly revolutionary for aerospace and military applications. The simultaneous combination of high frequency, wide bandwidth, high power capabilities and high-temperature operation make GaN a natural fit for military applications.

GaN is a semiconductor material that can amplify high-power radio frequency signals efficiently at microwave frequencies to enhance the system’s range. Consequently, GaN has become the preferred technology for high-RF power applications like electronic warfare, radar, satellite communications, and base stations. The adoption of GaN has already made significant strides, demonstrating its prowess in applications such as radar, counter-IED jammers, and 4G/5G base stations.

Here are some of the benefits of using GaN in aerospace and military applications:

  • Higher performance: GaN devices can operate at higher frequencies and voltages than silicon devices, which allows them to achieve higher performance. This is important for applications such as radar and communications, where high performance is essential.
  • Smaller size and weight: GaN devices are smaller and lighter than silicon devices, which is important for aerospace and military applications where weight and space are limited.
  • Greater efficiency: GaN devices are more efficient than silicon devices, which means they can operate with less power. This is important for applications where power consumption is a concern, such as satellite communications and electronic warfare.
  • Robustness: GaN devices are more robust than silicon devices and can withstand harsh environments. This is important for aerospace and military applications where the devices may be exposed to extreme temperatures, radiation, or other harsh conditions.

Modernizing Electronic Warfare

In the realm of Electronic Warfare (EW), GaN has taken center stage. It enables the creation of power amplifiers for generating broadband microwave noise that disrupts RF signals used to detonate improvised explosive devices (IEDs). Military was the early user of GaN for Electronic Warfare applications, Anti-IED (improvised explosive devices) systems used GaN-based Power Amplifiers to generate broadband microwave noise to disrupt and jam RF signals used to detonate the IEDs.


Transforming Tactical Radios and Radar Systems

GaN’s potential transcends electronic warfare and extends to tactical radios and radar systems.  With its capacity to reduce system complexity and physical space, GaN is poised to revolutionize wideband communications and tactical radios. A single GaN-powered transistor can perform multi-band transmissions, replacing the need for multiple transistors. Furthermore, a single wideband power amplifier using GaN components can perform the tasks of several narrowband amplifiers, each covering the radio’s wavebands.

Multiple-in/multiple-out (MIMO) systems

Gallium Nitride (GaN) technology is making significant inroads into the realm of multiple-in/multiple-out (MIMO) systems, presenting a game-changing potential for enhanced wireless communication. MIMO technology involves the use of multiple antennas at both the transmitter and receiver ends, enabling the simultaneous transmission and reception of multiple data streams. GaN’s exceptional attributes, including its high power density and wide bandwidth, align seamlessly with the demands of MIMO systems.

By leveraging GaN’s capabilities, MIMO systems can achieve remarkable advancements. GaN’s high-power amplification and efficiency facilitate the creation of robust and high-performance transmitters that can handle the demands of multi-stream data transmission. The material’s ability to operate at higher frequencies contributes to expanded data capacity, resulting in improved throughput and reduced latency. Furthermore, GaN’s efficiency aids in minimizing power consumption, ensuring sustainable operation in resource-constrained environments.

In the context of military and aerospace applications, GaN-powered MIMO systems offer substantial benefits. The enhanced data rates and reliable connectivity enabled by GaN technology are crucial for real-time communication, data sharing, and situational awareness in dynamic and challenging operational scenarios. Whether in tactical communication networks, airborne platforms, or satellite systems, GaN-driven MIMO technology enhances mission effectiveness and response capabilities.

This versatility has attracted the interest of military technology giants like Harris and Persistent

Software Defined Radios (SDRs)

Gallium Nitride (GaN) technology is ushering in a new era for Software Defined Radios (SDRs), a vital component of modern communication systems. Software-defined radio (SDR) architectures are playing an increasingly important role in emerging radio configurations with requirements for supporting multi-band and multi-standard operation. They will be reconfigurable by software which allows improved spectral efficiency and faster deployment of new standards.

SDRs, driven by GaN’s remarkable attributes, are poised to redefine the landscape of wireless communication by enabling unprecedented flexibility, adaptability, and performance.

GaN’s high power density and wide bandwidth make it an ideal candidate for SDRs. The material’s power efficiency, combined with its ability to handle high-frequency operations, empowers SDRs to accommodate a broad spectrum of communication standards and modulation schemes. This adaptability is essential for addressing the growing complexity of wireless networks, where multiple communication protocols coexist.

One of the significant challenges in SDRs is achieving high linearity and wide bandwidth, both of which are inherently supported by GaN technology. GaN’s exceptional linearity characteristics enable SDRs to transmit and receive signals with minimal distortion, improving signal quality and minimizing interference. Additionally, GaN’s wide bandwidth capability aligns with SDRs’ need to cover diverse frequency ranges, allowing for seamless transitions between different communication bands.GaN is also attractive for LNA (low noise amplifiers) due to its excellent electrical robustness (high maximal field), which should simplify the system integration and improve overall performance

Furthermore, GaN’s compact size and power efficiency contribute to the miniaturization and portability of SDRs, crucial for applications ranging from tactical communication devices to mobile handsets. This empowers military personnel and communication professionals with versatile communication tools that adapt to varying operational needs.

GaN-powered SDRs hold significant promise across various sectors, including military, aerospace, emergency response, and beyond. As GaN technology continues to evolve and integrate with SDR architectures, it enhances the adaptability, efficiency, and effectiveness of communication systems, charting a path toward a more connected and dynamic future.

Elevating Radar Capabilities with GaN

In the field of radar technology, GaN is taking radar systems to unprecedented heights. Active electronically scanned array (AESA) radar systems, pivotal for modern situational awareness, are leveraging GaN’s energy-efficient amplification and high-pulsed powers. GaN-based AESA modules are enhancing target tracking, enabling high-precision multi-target tracking across short and long ranges. This advancement is showcased by Raytheon’s re-engineered Patriot radar prototype and the U.S. Navy’s adoption of GaN-based radar systems.


The integration of Gallium Nitride (GaN) technology into the development of missiles has revolutionized the capabilities of these projectiles. GaN-based missiles represent a significant advancement over traditional missiles in terms of both power and precision. GaN’s exceptional properties enable these missiles to achieve higher levels of propulsion, allowing them to fly at faster speeds and cover much greater distances compared to their conventional counterparts. This increased range provides military forces with extended reach and flexibility in engaging targets.

Moreover, GaN’s influence extends to the guidance systems of these advanced missiles. GaN technology facilitates the incorporation of more sophisticated and intricate guidance systems, leveraging the material’s high carrier density and ultra-low resistance to enhance computational capabilities. This results in heightened accuracy and improved target-tracking capabilities, allowing GaN-based missiles to navigate complex environments with precision. The combination of GaN’s enhanced propulsion and advanced guidance systems ensures that these missiles are not only faster and more powerful but also better equipped to engage targets with unprecedented accuracy.

Some of the latest military programs and systems employing GaN technology:

The US Army’s Terminal High Altitude Area Defense (THAAD) system: The THAAD system is a ground-based missile defense system that uses GaN-based radars to detect and track incoming missiles. The GaN radars in the THAAD system are more powerful and efficient than traditional silicon-based radars, which allows them to see further and detect smaller targets.

The US Navy’s AN/SPY-6 radar: The AN/SPY-6 radar is a new generation of radar system that is being used on the Arleigh Burke-class destroyers of the US Navy. The AN/SPY-6 radar uses GaN-based transmit/receive modules, which makes it more powerful and efficient than previous radar systems.
The US Air Force’s F-35 Lightning II fighter jet: The F-35 Lightning II fighter jet uses GaN-based radars and electronic warfare systems. The GaN radars in the F-35 allow it to see further and detect smaller targets, while the GaN-based electronic warfare systems make it more difficult for enemy radars to track the aircraft.
The Israeli Air Force’s Iron Dome system: The Iron Dome system is a short-range air defense system that uses GaN-based radars to detect and track incoming rockets and missiles. The GaN radars in the Iron Dome system are more powerful and efficient than traditional silicon-based radars, which allows them to track more targets and engage them more quickly.

The Russian S-400 Triumf air defense system: The S-400 Triumf air defense system is a long-range air defense system that uses GaN-based radars to detect and track incoming aircraft and missiles. The GaN radars in the S-400 system are more powerful and efficient than traditional silicon-based radars, which allows them to track more targets and engage them at longer ranges.
These are just a few of the many military programs and systems that are employing GaN technology. GaN technology is rapidly becoming the standard for a wide range of military applications, and it is likely to play an increasingly important role in the future of warfare.

Pioneering the Future: GaN’s Cosmic Applications

GaN’s impact isn’t confined to Earth’s surface—it’s reaching beyond our planet. NASA’s forays into GaN are unlocking its potential for space applications. Its resistance to radiation and superior performance in extreme conditions make GaN an excellent candidate for solar cell arrays on satellites. Additionally, GaN’s versatility is being explored for detecting energetic particles and studying Earth’s magnetosphere-ionosphere coupling.

Here are some specific examples of research projects that are exploring the use of GaN for space applications:

  • NASA’s Goddard Space Flight Center is developing GaN-based radars for use in space exploration missions. These radars would be more powerful and efficient than traditional silicon-based radars, and they would be able to see further and detect smaller targets.
  • The European Space Agency is developing GaN-based communications systems for use in deep space missions. These systems would be more reliable and efficient than traditional silicon-based systems, and they would be able to withstand the harsh environment of space.
  • The University of California, Los Angeles is developing GaN-based thrusters for use in spacecraft. These thrusters would be more efficient and powerful than traditional silicon-based thrusters, and they would be able to maneuver spacecraft more precisely.
  • The Massachusetts Institute of Technology is developing GaN-based neutron detectors for use in space missions. These detectors would be more sensitive than traditional silicon-based detectors, and they would be able to detect neutrons from a variety of sources, such as the Sun and supernovas.


Gallium Nitride (GaN) technology is not just a game-changer; it’s a revolution in the semiconductor industry. With its wide bandgap, high power density, and energy efficiency, GaN is poised to transform aerospace and military applications. From electronic warfare and tactical radios to radar systems and space exploration, GaN is elevating performance and capabilities across the board. As GaN’s potential continues to unfold, its impact on the future of technology, communication, and defense is undeniable.




About Rajesh Uppal

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