Technology breakthroughs in GaN enabling large growth in Semiconductor devices market in Defence and Aerospace

GaN is a semiconductor material that can amplify high power radio frequency signals efficiently at microwave frequencies  to enhance  a system’s range. Therefore it has become the technology of choice for high-RF power applications that require the transmission of signals over long distances such as EW, radar, base stations and satellite communications. The advantages of GaN-based devices stems largely from the attractive intrinsic physical properties of the material. The material exhibits wide bandgap, high breakdown voltage, extremely high power density and high gain at microwave frequencies. The raw materials for GaN are available in large quantities. Nitrogen can be taken from the air, and gallium is a waste product in metal working.